SI7686DP

N-Channel MOSFET, 8SOIC, 37.9W, 35A, 30V, 9.5 mOhm

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Price:: US $0.32~0.45 / piece [Get Latest Price]

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PartNumber:: SI7686DP

Brand:: Vishay Siliconix - vishay | Pack: QFN | D/C: 09+

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Products Upload time: 2012-03-18

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Product Summary

The SI7686DP is an N-Channel 30-V (D-S) MOSFET. It is sutiable for DC/DC Converters.

Parametrics

SI7686DP absolute maximum ratings: (1)Drain-Source Voltage, VDS: 30V; (2)Gate-Source Voltage, VGS: ±20V; (3)Continuous Drain Current (TJ=150℃), ID: 35A at Tc=25℃ or Tc=70℃; 17.9A at TA=25℃; 14.3A at TA=70℃; (4)Pulsed Drain Current, IDM: 50A; (5)Continuous Source Drain Diode Current, IS: 31.5A at TC=25℃; 4.2A at TA=25℃; (6)Maximum Power Dissipation, PD: 37.9W at TC=25℃; 24.2W at Tc=70℃; 5W at TA=25℃; 3.2W at TA=70℃; (7)operating Junction and Storage Temperature Range, TJ, Tstg: –55 to 150℃; (8)Soldering Recommendations (Peak Temperature): 260℃.

Features

SI7686DP features: (1)TrenchFET Power MOSFET; (2)New Low Thermal Resistance PowerPAK Package with Low 1.07mm Profile; (3)Optimized for High-Side Synchronous Rectifier Operation; (4)100% Rg Tested.