K9F1208U0C-PIB0

Product Summary

The K9F1208U0C-PIB0 is a 512Mbit NAND Flash Memory with spare 16Mbit capacity. The K9F1208U0C-PIB0 is offered in 1.8V, 2.7V and 3.3V Vcc. Its NAND cell provides the most cost-effective solutIon for the solid state mass storage market. A program operation can be performed in typical 200μs on the 528-bytes and an erase operation can be performed in typical 2ms on a 16K-bytes block. Data in the page can be read out at 42ns cycle time per byte. The I/O pins serve as the ports for address and data input/output as well as command input. The on-chip write control automates all program and erase functions including pulse repetition, where required, and internal verification and margining of data. Even the write-intensive systems can take advantage of the K9F1208U0C-PIB0’s extended reliability of 100K program/erase cycles by providing ECC(Error Correcting Code) with real time mapping-out algorithm. The K9F1208U0C-PIB0 is an optimum solution for large nonvolatile storage applications such as solid state file storage and other portable applications requiring non-volatility.

Parametrics

K9F1208U0C-PIB0 absolute maximum ratings: (1)Voltage on any pin relative to VSS, VCC: -0.6 to + 4.6V; VIN: -0.6 to + 4.6V; VI/O: -0.6 to Vcc + 0.3 (< 4.6V); (2)Temperature Under Bias, TBIAS: -10 to +125℃; (3)Storage Temperature, TSTG: -65 to +150℃; (4)Short Circuit Current, IOS: 5mA.

Features

K9F1208U0C-PIB0 features: (1)Voltage Supply: 2.7V ~ 3.6V; (2)Organization: Memory Cell Array : (64M + 2M) x 8bits; Data Register : (512 + 16) × 8bits; (3)Automatic Program and Erase: Page Program: (512 + 16) × 8bits; Block Erase : (16K + 512)Bytes; (4)Page Read Operation: Page Size: (512 + 16)Bytes; Random Access: 15μs(Max.); Serial Page Access : 42ns(Min.); (5)Fast Write Cycle Time: Program time: 200μs(Typ.); Block Erase Time: 2ms(Typ.); (6)Command/Address/Data Multiplexed I/O Port; (7)Hardware Data Protection: Program/Erase Lockout During Power Transitions; (8)Reliable CMOS Floating-Gate Technology: Endurance: 100K Program/Erase Cycles with 1bit/512Byte ECC); Data Retention: 10 Years; (9)Command Register Operation; (10)Unique ID for Copyright Protection.

Diagrams